Temperature Dependence of Raman-Active In-Plane E<sub>2g</sub> Phonons in Layered Graphene and h-BN Flakes.
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| Abstract | :  Thermal properties of sp2 systems such as graphene and hexagonal boron nitride (h-BN) have attracted significant attention because of both systems being excellent thermal conductors. This research reports micro-Raman measurements on the in-plane E2g optical phonon peaks (~ 1580 cm-1 in graphene layers and ~ 1362 cm-1 in h-BN layers) as a function of temperature from - 194 to 200 °C. The h-BN flakes show higher sensitivity to temperature-dependent frequency shifts and broadenings than graphene flakes. Moreover, the thermal effect in the c direction on phonon frequency in h-BN layers is more sensitive than that in graphene layers but on phonon broadening in h-BN layers is similar as that in graphene layers. These results are very useful to understand the thermal properties and related physical mechanisms in h-BN and graphene flakes for applications of thermal devices. | 
| Year of Publication | :  2018 | 
| Journal | :  Nanoscale research letters | 
| Volume | :  13 | 
| Issue | :  1 | 
| Number of Pages | :  25 | 
| Date Published | :  2018 | 
| ISSN Number | :  1931-7573 | 
| URL | :  https://dx.doi.org/10.1186/s11671-018-2444-2 | 
| DOI | :  10.1186/s11671-018-2444-2 | 
| Short Title | :  Nanoscale Res Lett | 
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