Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V x s.
Author | |
---|---|
Abstract |
:
We present the device parameters for organic field-effect transistors fabricated from solution-deposited films of functionalized pentacene and anthradithiophenes. These materials are easily prepared in one or two steps from commercially available starting materials and are purified by simple recrystallization. For a solution-deposited film of functionalized pentacene, hole mobility of 0.17 cm2/V.s was measured. The functionalized anthradithiophenes showed behavior strongly dependent on the substituents, with hole mobilities as high as 1.0 cm2/V.s. |
Year of Publication |
:
2005
|
Journal |
:
Journal of the American Chemical Society
|
Volume |
:
127
|
Issue |
:
14
|
Number of Pages |
:
4986-7
|
Date Published |
:
2005
|
ISSN Number |
:
0002-7863
|
URL |
:
https://doi.org/10.1021/ja042353u
|
DOI |
:
10.1021/ja042353u
|
Short Title |
:
J Am Chem Soc
|
Download citation |