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Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V x s.

Author
Abstract
:

We present the device parameters for organic field-effect transistors fabricated from solution-deposited films of functionalized pentacene and anthradithiophenes. These materials are easily prepared in one or two steps from commercially available starting materials and are purified by simple recrystallization. For a solution-deposited film of functionalized pentacene, hole mobility of 0.17 cm2/V.s was measured. The functionalized anthradithiophenes showed behavior strongly dependent on the substituents, with hole mobilities as high as 1.0 cm2/V.s.

Year of Publication
:
2005
Journal
:
Journal of the American Chemical Society
Volume
:
127
Issue
:
14
Number of Pages
:
4986-7
Date Published
:
2005
ISSN Number
:
0002-7863
URL
:
https://doi.org/10.1021/ja042353u
DOI
:
10.1021/ja042353u
Short Title
:
J Am Chem Soc
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